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Gas Phase Deposition of Trichloro(1H,1H,2H,2H-perfluorooctyl)silane on Silicon Dioxide, by XPS
Lee, Michael V. Husseini, Ghaleb Sautter, Ken Linford, Matthew R.
Lee, Michael V.
Husseini, Ghaleb
Sautter, Ken
Linford, Matthew R.
Date
2012
Advisor
Type
Peer-Reviewed
Article
Published version
Article
Published version
Degree
Description
Abstract
Monolayers of trichloro(lH,1H,2H,2H-perfluorooctyl)silane, Cl3SiCH2CH2(CF2)5CF3, were deposited via chemical vapor deposition onto the native oxide layer on silicon after plasma-cleaning. The samples have high hydrophobicity, and provide a valuable comparison to perfluorinated alkyl silane layers obtained by liquid deposition. Gas-phase deposition of perfluorinated alkyl silanes is a useful means for reducing stiction in micro- and nano-electromechanical systems, which have narrow spaces that can trap bubbles and prevent liquid-based silane passivation.